首页> 外文OA文献 >Low noise constant current source for bias dependent noise measurements

【2h】

Low noise constant current source for bias dependent noise measurements

机译：用于偏置相关噪声测量的低噪声恒定电流源

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

A low noise constant current source used for measuring the $1/f$ noise indisordered systems in ohmic as well as non-ohmic regime is described. Thesource can supply low noise constant current starting from as low as 1 $\mu$Ato a few tens of mA with a high voltage compliance limit of around 20 Volts.The constant current source has several stages which can work in a standalonemanner or together to supply the desired value of load current. The noisecontributed by the current source is very low in the entire current range. Thefabrication of a low noise voltage preamplifier modified for bias dependentnoise measurements and based on the existing design available in the MAT04 datasheet is also described.

机译：描述了一种低噪声恒定电流源，该电流源用于测量欧姆以及非欧姆状态下的$ 1 / f $噪声无序系统。该源可提供低噪声恒定电流，从低至1μA/μA到几十mA，高电压顺从极限约为20伏。恒流源具有多个阶段，可以独立工作或一起工作提供所需的负载电流值。在整个电流范围内，电流源产生的噪声非常低。还描述了一种低噪声电压前置放大器的制造，该放大器经过修改可用于偏置相关噪声测量，并基于MAT04数据表中的现有设计进行制造。

著录项

作者
Talukdar, D.; Chakraborty, R. K.; Bose, Suvendu; Bardhan, K. K.;
展开▼
作者单位

展开▼
年度 2010
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. A Low-Noise and Quasi-Ideal DC Current Source Dedicated to Four-Probe Low-Frequency Noise Measurements [J] . IEEE Transactions on Instrumentation and Measurement . 2020,第1期

机译：专用于四探头低频噪声测量的低噪声，准理想直流电流源
2. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias [J] . Yong?Ding, Xiao-hua?Luo, Xiao-lang?Yan Journal of Zhejiang university science . 2011,第7期

机译：具有侧偏偏置的GaAs MESFET通道中的电流振荡和低频噪声
3. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias [J] . Yong DING, Xiao-hua LUO, Xiao-lang YAN 浙江大学学报（英文版）（C辑：计算机与电子） . 2011,第007期

机译：具有侧偏偏置的GaAs MESFET通道中的电流振荡和低频噪声
4. A new temperature noise model of HFET with special emphasis on a gateleakage current and investigation of the bias dependence of the equivalent noise sources [C] . R Reuter, St van Waasen, D Peters, 25th European Microwave Conference Vol. One: Invited 1 to C5.5 Bologna, Italy 4-7 September 95 . 1995

机译：HFET的一种新的温度噪声模型，其重点是栅极漏电流和等效噪声源的偏置依赖性研究
5. Bias and temperature-dependent noise modeling of microwave and millimeter-wave field-effect transistors. [D] . Lardizabal, Steven Marc. 1997

机译：微波和毫米波场效应晶体管的偏置和温度相关噪声建模。
6. Measurement with verification of stationary signals and noise in extremely quiet environments: Measuring below the noise floor [O] . Roger M. Ellingson, a), Frederick J. Gallun, -1

机译：在极端安静的环境中进行测量以验证固定信号和噪声：在本底噪声以下进行测量
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明

Low noise constant current source for bias dependent noise measurements

摘要

著录项

相似文献

相关主题

期刊订阅